Gestern hab ich mal Hynix und Samsung VRAM mit dem MrH Benchmark verglichen. Zweimal ASUS Prime 9070 XT.
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This benchmark has a lower load compared to the vulcan memtest or 3DMark. But I think, results are comparable.
We can see that at the same VRAM speed, the Hynix performs better and gets remarkably hotter (at 19°C ambient temps, 58°C idle, 72°C max under load). The Samsung performs lower and colder (between 38 and 62°C).
I did this test with +10% power, other settings were stock. The Samsung VRAM has the original pads, while the Hynix got putty.
Quite interesting, that there is no performance difference between standard timings (ST) and the fast timings (FT). Not sure if this is real. And when I set 2780 MHz VRAM with the Hynix, my screen gets black. The Samsung VRAM can go extremely high, but over 2900 MHz, the error correction lowers the performance.
Here I didn't try, but I assume (or know), when I icrease the card's power and voltage, then the Hynix VRAM can also clock higher. Unclear how high, but my best Steel Nomad score was done with over 2800 MHz. But I need to increase voltage and power first - only then it can clock higher than 2770 MHz.